TP65H050G4BS

Transphorm

Product No:

TP65H050G4BS

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Package:

TO-263

Datasheet:

Description:

650 V 34 A GAN FET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	119W (Tc)
Series	SuperGaN®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TP65H050