TP65H050WS
detaildesc

TP65H050WS

Transphorm

Product No:

TP65H050WS

Manufacturer:

Transphorm

Package:

TO-247-3

Datasheet:

-

Description:

GANFET N-CH 650V 34A TO247-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 167

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $16.399845

    $16.399845

  • 10

    $14.759861

    $147.59861

  • 50

    $13.119876

    $655.9938

  • 100

    $11.479892

    $1147.9892

  • 500

    $11.151895

    $5575.9475

  • 1000

    $10.93323

    $10933.23

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 700µA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 119W (Tc)
Series -
Package / Case TO-247-3
Technology GaNFET (Cascode Gallium Nitride FET)
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 12V
Package Tube
Base Product Number TP65H050