TP65H070G4LSGB-TR
detaildesc

TP65H070G4LSGB-TR

Transphorm

Product No:

TP65H070G4LSGB-TR

Manufacturer:

Transphorm

Package:

8-PQFN (8x8)

Datasheet:

-

Description:

GANFET N-CH 650V 29A QFN8X8

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1977

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.839688

    $8.839688

  • 10

    $7.955719

    $79.55719

  • 50

    $7.07175

    $353.5875

  • 100

    $6.187781

    $618.7781

  • 500

    $6.010988

    $3005.494

  • 1000

    $5.893125

    $5893.125

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.6V @ 700µA
Supplier Device Package 8-PQFN (8x8)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 96W (Tc)
Series SuperGaN®
Package / Case 8-PowerTDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)