TP65H070LSG-TR
detaildesc

TP65H070LSG-TR

Transphorm

Product No:

TP65H070LSG-TR

Manufacturer:

Transphorm

Package:

3-PQFN (8x8)

Datasheet:

-

Description:

GANFET N-CH 650V 25A PQFN88

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 9843

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $11.714063

    $11.714063

  • 10

    $10.542656

    $105.42656

  • 50

    $9.37125

    $468.5625

  • 100

    $8.199844

    $819.9844

  • 500

    $7.965563

    $3982.7815

  • 1000

    $7.809375

    $7809.375

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 700µA
Supplier Device Package 3-PQFN (8x8)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 96W (Tc)
Series TP65H070L
Package / Case 3-PowerDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)