TP65H150BG4JSG-TR
detaildesc

TP65H150BG4JSG-TR

Transphorm

Product No:

TP65H150BG4JSG-TR

Manufacturer:

Transphorm

Package:

8-PQFN (5x6)

Datasheet:

-

Description:

GANFET N-CH 650V 13A QFN5X6

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1352

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.91375

    $2.91375

  • 10

    $2.622375

    $26.22375

  • 50

    $2.331

    $116.55

  • 100

    $2.039625

    $203.9625

  • 500

    $1.98135

    $990.675

  • 1000

    $1.9425

    $1942.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 6V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 500µA
Supplier Device Package 8-PQFN (5x6)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 83W (Tc)
Series SuperGaN®
Package / Case 8-PowerTDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Transphorm
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 6V
Package Tape & Reel (TR)