TP65H150G4LSG-TR
detaildesc

TP65H150G4LSG-TR

Transphorm

Product No:

TP65H150G4LSG-TR

Manufacturer:

Transphorm

Package:

2-PQFN (8x8)

Datasheet:

-

Description:

650 V 13 A GAN FET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1426

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.54375

    $3.54375

  • 10

    $3.189375

    $31.89375

  • 50

    $2.835

    $141.75

  • 100

    $2.480625

    $248.0625

  • 500

    $2.40975

    $1204.875

  • 1000

    $2.3625

    $2362.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 500µA
Supplier Device Package 2-PQFN (8x8)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 52W (Tc)
Series -
Package / Case 2-PowerTSFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)