Transphorm
Product No:
TP65H150G4LSG-TR
Manufacturer:
Package:
2-PQFN (8x8)
Datasheet:
-
Description:
650 V 13 A GAN FET
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.54375
$3.54375
10
$3.189375
$31.89375
50
$2.835
$141.75
100
$2.480625
$248.0625
500
$2.40975
$1204.875
1000
$2.3625
$2362.5
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.8V @ 500µA |
Supplier Device Package | 2-PQFN (8x8) |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 52W (Tc) |
Series | - |
Package / Case | 2-PowerTSFN |
Technology | GaNFET (Gallium Nitride) |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Mfr | Transphorm |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |