TPH2R306NH1,LQ

Toshiba Semiconductor and Storage

Product No:

TPH2R306NH1,LQ

Manufacturer:

Package:

8-SOP Advance (5x5.75)

Datasheet:

Description:

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Quantity:

Delivery:

Payment:

In Stock : 6683

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6100 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.3mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-SOP Advance (5x5.75)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	800mW (Ta), 170W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	136A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Package	Tape & Reel (TR)