TPW1R104PB,L1XHQ

Toshiba Semiconductor and Storage

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TPW1R104PB,L1XHQ

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Package:

8-DSOP Advance

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Description:

MOSFET N-CH 40V 120A 8DSOP

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.14mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 500µA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Series	U-MOSIX-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPW1R104