TPW2R508NH,L1Q
Toshiba Semiconductor and Storage
Product No:
TPW2R508NH,L1Q
Manufacturer:
Package:
8-DSOP Advance
Datasheet:
-
Description:
PB-F POWER MOSFET TRANSISTOR DOS
Quantity:
Delivery:
Payment:
In Stock : 9686
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.575
$1.575
10
$1.4175
$14.175
50
$1.26
$63
100
$1.1025
$110.25
500
$1.071
$535.5
1000
$1.05
$1050
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Product Information
Parameter Info
User Guide
| Operating Temperature | 150°C |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 37.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 50A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DSOP Advance |
| Drain to Source Voltage (Vdss) | 75 V |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
| Series | U-MOSVIII-H |
| Package / Case | 8-PowerWDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
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