TPW3R70APL,L1Q
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TPW3R70APL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPW3R70APL,L1Q

Package:

8-DSOP Advance

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR DSO

Quantity:

Delivery:

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Payment:

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In Stock : 3298

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.840703

    $1.840703

  • 10

    $1.656632

    $16.56632

  • 50

    $1.472562

    $73.6281

  • 100

    $1.288492

    $128.8492

  • 500

    $1.251678

    $625.839

  • 1000

    $1.227135

    $1227.135

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.7mOhm @ 45A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-DSOP Advance
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Series U-MOSIX-H
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)