TPW4R008NH,L1Q
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TPW4R008NH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPW4R008NH,L1Q

Package:

8-DSOP Advance

Datasheet:

-

Description:

MOSFET N-CH 80V 116A 8DSOP

Quantity:

Delivery:

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Payment:

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In Stock : 7469

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.775813

    $1.775813

  • 10

    $1.598231

    $15.98231

  • 50

    $1.42065

    $71.0325

  • 100

    $1.243069

    $124.3069

  • 500

    $1.207553

    $603.7765

  • 1000

    $1.183875

    $1183.875

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package 8-DSOP Advance
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Series U-MOSVIII-H
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TPW4R008