TRS12V65H,LQ
Toshiba Semiconductor and Storage
Product No:
TRS12V65H,LQ
Manufacturer:
Package:
4-DFN-EP (8x8)
Datasheet:
-
Description:
G3 SIC-SBD 650V 12A DFN8X8
Quantity:
Delivery:
Payment:
In Stock : 3811
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.000375
$3.000375
10
$2.700337
$27.00337
50
$2.4003
$120.015
100
$2.100262
$210.0262
500
$2.040255
$1020.1275
1000
$2.00025
$2000.25
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Product Information
Parameter Info
User Guide
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 778pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
| Series | - |
| Package / Case | 4-VSFN Exposed Pad |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A |
| Mfr | Toshiba Semiconductor and Storage |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tape & Reel (TR) |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | 175°C |
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