TRS6A65F,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS6A65F,S1Q
Manufacturer:
Package:
TO-220F-2L
Datasheet:
-
Description:
DIODE SIL CARBIDE 650V 6A TO220F
Quantity:
Delivery:
Payment:
In Stock : 33
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.988438
$1.988438
10
$1.789594
$17.89594
50
$1.59075
$79.5375
100
$1.391906
$139.1906
500
$1.352137
$676.0685
1000
$1.325625
$1325.625
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 22pF @ 650V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220F-2L |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Series | - |
| Package / Case | TO-220-2 Full Pack |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Mfr | Toshiba Semiconductor and Storage |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) | 6A |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | TRS6A65 |
TRS6A65F,S1Q Related Blog
2000+Daily average RFQ Volume
300,000Standard Product Unit
280+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback