TW015N65C,S1F

Toshiba Semiconductor and Storage

Product No:

TW015N65C,S1F

Manufacturer:

Package:

TO-247

Datasheet:

Description:

G3 650V SIC-MOSFET TO-247 15MOH

Quantity:

Delivery:

Payment:

In Stock : 36

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4850 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	128 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	342W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube