V8PAM10S-M3/I

Vishay General Semiconductor - Diodes Division

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V8PAM10S-M3/I

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Package:

DO-221BC (SMPA)

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Description:

DIODE SCHOTTKY 100V 2.8A DO221BC

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	600pF @ 4V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DO-221BC (SMPA)
Current - Reverse Leakage @ Vr	180 µA @ 100 V
Series	Automotive, AEC-Q101
Package / Case	DO-221BC, SMA Flat Leads Exposed Pad
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	840 mV @ 8 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	2.8A
Operating Temperature - Junction	-40°C ~ 175°C