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VS-3C06ET07S2L-M3
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VS-3C06ET07S2L-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C06ET07S2L-M3

Package:

TO-263AB (D²PAK)

Datasheet:

pdf

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

Delivery:

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Payment:

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In Stock : 988

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.28564

    $2.28564

  • 10

    $2.057076

    $20.57076

  • 50

    $1.828512

    $91.4256

  • 100

    $1.599948

    $159.9948

  • 500

    $1.554235

    $777.1175

  • 1000

    $1.52376

    $1523.76

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Capacitance @ Vr, F 255pF @ 1V, 1MHz
Reverse Recovery Time (trr) 0 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr 35 µA @ 650 V
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 6A
Operating Temperature - Junction -55°C ~ 175°C